r07ds0308ej0200 rev.2.00 page 1 of 7 mar 28, 2011 preliminary datasheet rqk0604igdqa silicon n channel mos fet power switching features ? low on-resistance r ds(on) = 111 m typ.(at v gs = 4.5 v, i d = 1 a) ? low drive current ? high speed switching ? v dss 60 v and capable of 2.5 v gate drive outline renesas package code: plsp0003zb-a (package name: mpak ) 1. source 2. gate 3. drain g d s 2 1 3 1 2 3 note: marking is ?ig?. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 12 v drain current i d 2 a drain peak current i d(pulse) note1 8 a body - drain diode reverse drain current i dr 2 a channel dissipation pch note2 0.8 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr-4 40 40 1 mm) r07ds0308ej0200 (previous: rej03g1496-0100) rev.2.00 mar 28, 2011
rqk0604igdqa preliminary r07ds0308ej0200 rev.2.00 page 2 of 7 mar 28, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss +12 ? ? v i g = +100 a, v ds = 0 gate to source breakdown voltage v (br)gss ?12 ? ? v i g = ?100 a, v ds = 0 gate to source leak current i gss ? ? +10 a v gs = +10 v, v ds = 0 gate to source leak current i gss ? ? ?10 a v gs = ?10 v, v ds = 0 drain to source leak current i dss ? ? 1 a v ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 0.4 ? 1.4 v v ds = 10 v, i d = 1 ma drain to source on state resistance r ds(on) ? 111 144 m i d = 1 a, v gs = 4.5 v note3 drain to source on state resistance r ds(on) ? 129 180 m i d = 1 a, v gs = 2.5 v note3 forward transfer admittance |y fs | 3 6 ? s i d = 1 a, v ds = 10 v note3 input capacitance ciss ? 320 ? pf output capacitance coss ? 38 ? pf reverse transfer capacitance crss ? 20 ? pf v ds = 10 v v gs = 0 f = 1 mhz turn - on delay time t d(on) ? 12 ? ns rise time t r ? 35 ? ns turn - off delay time t d(off) ? 36 ? ns fall time t f ? 3.7 ? ns i d = 1 a v gs = 10 v r l = 10 rg = 4.7 total gate charge qg ? 3.4 ? nc gate to source charge qgs ? 0.6 ? nc gate to drain charge qgd ? 1.0 ? nc v dd = 10 v v gs = 4.5 v i d = 2 a body - drain diode forward voltage v df ? 0.8 ? v i f = 2 a, v gs = 0 note3 notes: 3. pulse test
rqk0604igdqa preliminary r07ds0308ej0200 rev.2.00 page 3 of 7 mar 28, 2011 main characteristics channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics (1) 10 8 6 4 2 0 12 34 10 8 6 4 2 0 246810 v gs = 0 v 1.4 v 1.6 v 1.8 v 2 v 2.4 v 2.2 v 3 v 7, 10 v 5 v 0 0.2 0.4 0.6 0.8 1 0 25 50 75 100 125 150 175 test condition : when using the glass epoxy board (fr-4 40 x 40 x 1 mm) 75c 25c tc = ?25c v ds = 10 v pulse test typical transfer characteristics (2) gate to source voltage v gs (v) drain current i d (a) gate to source cutoff voltage vs. case temperature case temperature tc ( c) gate to source cutoff voltage v gs(off) (v) 0.00001 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 2 0 1 10 ?25 0 25 50 75 100 125 150 v ds = 10 v pulse test tc = 75 c 25 c ?25 c v ds = 10 v pulse test i d = 10 ma 1 ma 0.1 ma 30 10 3 1 0.3 0.1 0.1 0.3 0.03 1 3 10 30 100 0.03 0.01 0.001 0.003 0.01 100 1 ms pw = 10 ms 100 s 10 s dc operati on ta = 25c 1shot pulse operation in this area is limited by r ds(on) pulse test tc = 25c
rqk0604igdqa preliminary r07ds0308ej0200 rev.2.00 page 4 of 7 mar 28, 2011 gate to source voltage v gs (v) drain to source voltage v ds(on) (mv) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. drain current 0246810 500 400 100 200 300 1 a 2 a 1.5 a i d = 0.5 a static drain to source on state resistance vs. case temperature (1) case temperature tc ( c) drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. case temperature (2) case temperature tc ( c) drain to source on state resistance r ds(on) (m ) forward transfer admittance vs. drain current drain current i d (a) forward transfer admittance |y fs | (s) zero gate voltage drain current vs. case temperature case temperature tc ( c) zero gate voltage drain current i dss (na) ?25 0 25 50 75 100 125 150 0.01 0.1 100 10 1 0.01 0.1 10 1 1 10 100 1000 10000 pulse test v gs = 0 v v ds = 60 v 50 100 150 200 250 50 100 150 200 250 ?25 0 25 50 75 100 125 150 ?25 0 25 50 75 100 125 150 1.5 a 1 a 0.5 a i d = 2 a pulse test v gs = 4.5 v 1.5 a 1 a 0.5 a i d = 2 a pulse test v gs = 2.5 v ?25 c tc = 75 c 25 c pulse test v ds = 10 v 0.1 10 1 100 1000 10 2.5 v 4.5 v v gs = 10 v pulse test tc = 25c pulse test tc = 25c
rqk0604igdqa preliminary r07ds0308ej0200 rev.2.00 page 5 of 7 mar 28, 2011 drain to source voltage v ds (v) dynamic input characteristics gate charge qg (nc) gate to source voltage v gs (v) switching characteristics drain current i d (a) switching time t ( n s) typical capacitance vs. drain to source voltage drain to source voltage v ds (v) ciss1, coss, crss (pf) input capacitance vs. gate to source voltage gate to source voltage v gs (v) ciss2 (pf) reverse drain current i dr (a) reverse drain current vs. source to drain voltage source to drain voltage v sd (v) body-drain diode forward voltage vs. case temperature case temperature tc (c) body-drain diode forward voltage v sdf (v) 10 100 1000 0102030405060 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ?25 0 25 50 75 100 125 150 1 ma i d = 10 ma v gs = 0 0246810 0 40 60 0 4 8 12 v dd = 50 v 25 v 10v 20 80 16 i d = 2.0 a tc = 25c v dd = 10 v 25 v 50 v v gs v ds crss coss v gs = 0 v f = 1 mhz ciss 0 0.4 0.8 1.2 1.6 2.0 10 4 2 6 8 2.5 v 4.5 v 10 v v gs = 0 v v gs = ?2.5 v, ?4.5 v, ?10 v 400 450 500 550 600 700 650 ?10?8?6?4?20246810 v ds = 0 v f = 1 mhz pulse test tc = 25c 1000 100 1 10 0.01 0.1 1 10 v gs = 4.5 v, v dd = 10 v rg = 4.7 , duty 1 % tc = 25c t r t f t d(on) t d(off)
rqk0604igdqa preliminary r07ds0308ej0200 rev.2.00 page 6 of 7 mar 28, 2011 vin monitor d.u.t. vin 10 v r l rg v dd = 10 v vout monitor switching time test circuit waveform t r t f t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10%
rqk0604igdqa preliminary r07ds0308ej0200 rev.2.00 page 7 of 7 mar 28, 2011 package dimensions d e a aa b xsa m eh e a a 2 a 1 s b a-a section c qc l l 1 l p a 3 pattern of terminal position areas i 1 b 2 e e 1 a a 1 a 2 a 3 b c d e e h e l l 1 l p x b 2 e 1 i 1 q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in millimeters reference symbol max 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 sc-59a plsp0003zb-a mpak(t) / mpak(t)v 0.011g mass[typ.] renesas code jeita package code previous code package name mpak ordering information orderable part number quan tity shipping container rqk0604igdqatl-h 3000 pcs. 178 mm reel, 8 mm emboss taping
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is s ubject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology described in this document for any purpose rela ting to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 7. renesas electronics products are classified according to the following three quality grades: "standard", "high quality", an d "specific". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. you must check the quality grade of each renesas electronics produ ct before using it in a particular application. you may not use any renesas electronics product for any application categorized as "specific" without the prior written consent of renesas electronics. fu rther, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for an application categorized as "specific" or for which the product is not intended wh ere you have failed to obtain the prior written consent of renesas electronics. the quality grade of each renesas electronics product is "standard" unless otherwise expressly specified in a renesas electroni cs data sheets or data books, etc. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "specific": aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or syst ems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct thr eat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas el ectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design . please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compati bility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2011 renesas electronics corporation. all rights reserved. colophon 1.1
|
